? 2007 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c - 200 v v dgr t j = 25 c to 175 c, r gs = 1m - 200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 26 a i dm t c = 25 c, pulse width limited by t jm - 70 a i ar t c = 25 c - 26 a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 175 c 10 v/ns p d t c = 25 c 300 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-3p,to-220,to-247) 1.13/10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g to-220 3.0 g to-263 2.5 g ds99913(10/07) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = -250 a - 200 v v gs(th) v ds = v gs , i d = -250 a - 2.5 - 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss - 10 a v gs = 0v t j = 150 c - 250 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 170 m polarp tm power mosfet p-channel enhancement mode avalanche rated IXTA26P20P ixth26p20p ixtp26p20p ixtq26p20p v dss = - 200v i d25 = - 26a r ds(on) 170 m preliminary technical information features: z international standard packages z fast intrinsic diode z dynamic dv/dt rated z avalanche rated z rugged polarp tm process z low q g and r ds(on) characterization z low drain-to-tab capacitance z low package inductance - easy to drive and to protect applications: z hight side switching z push-pull amplifiers z dc choppers z current regulators z automatic test equipment advantages: z low gate charge results in simple drive requirement z improved gate, avalanche and dynamic dv/dt ruggedness z high power density z fast switching g = gate d = drain s = source tab = drain to-263 (i xta ) g s d(tab) to-247 (ixth) to-220 (i xtp ) d d(tab) g s g d s to-3p (ixtq) d(tab) g d s d(tab)
IXTA26P20P ixtp26p20p ixtp26p20p ixtq26p20p ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , (note 1) 10 17 s c iss 2920 pf c oss v gs = 0v, v ds = -25v, f = 1mhz 540 pf c rss 100 pf t d(on) 18 ns t r 33 ns t d(off) 46 ns t f 21 ns q g(on) 56 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 18 nc q gd 20 nc r thjc 0.5 c/w r thcs (to-3p)(to-247) 0.21 c/w (to-220) 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 26 a i sm repetitive - 104 a v sd i f = -13a, v gs = 0v, note 1 - 3.0 v t rr 240 ns q rm 2.20 c i rm -18.0 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) i f = -13a, -di/dt = -100a/ s v r = -100v, v gs = 0v
? 2007 ixys corporation, all rights reserved dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 to-247 (ixth) outline terminals: 1 - gate 2 - drain e ? p 1 2 3 to-3p (ixtq) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline IXTA26P20P ixtp26p20p ixtp26p20p ixtq26p20p
IXTA26P20P ixtp26p20p ixtp26p20p ixtq26p20p ixys reserves the right to change limits, test conditions, and dimensions. fig. 1. output characteristics @ 25oc -28 -24 -20 -16 -12 -8 -4 0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 v ds - volts i d - amperes v gs = -10 v -8 v -5 v -6 v -7 v fig. 2. extended output characteristics @ 25oc -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 v ds - volts i d - amperes v gs = -10 v -9 v -8 v -6 v -7 v -5 v fig. 3. output characteristics @ 150oc -28 -24 -20 -16 -12 -8 -4 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10 v -8 v -6 v -5 v -7 v fig. 4. r ds(on) normalized to i d = -13a vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -26 a i d = -13 a fig. 5. r ds(on) normalized to i d = -13a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes r ds(on) - normalized v gs = -10v -15v - - - - t j = 25oc t j = 175oc fig. 6. maximum drain current vs. case temperature -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade i d - amperes
? 2007 ixys corporation, all rights reserved fig. 7. input admittance -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -7 -6.5 -6 -5.5 -5 -4.5 -4 -3.5 -3 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 4 8 12 16 20 24 28 32 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode -80 -70 -60 -50 -40 -30 -20 -10 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v gs - volts v ds = -100v i d = - 13a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - --- 100ms IXTA26P20P ixtp26p20p ixtp26p20p ixtq26p20p
IXTA26P20P ixtp26p20p ixtp26p20p ixtq26p20p ixys reserves the right to change limits, test conditions, and dimensions. fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_26p20p(b5)10-10-07
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